AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThA

Paper EM1-ThA1
Short Range Order and Electronic Structure of Amorphous Silicon Oxinitride

Thursday, November 5, 1998, 2:00 pm, Room 314/315

Session: Dielectrics
Presenter: V.A. Gritsenko, Siberian Branch of Russian Academy of Science
Authors: V.A. Gritsenko, Siberian Branch of Russian Academy of Science
R.W.M. Kwok, The Chinese University of Hong Kong
Y.H. Ng, The Chinese University of Hong Kong
J.B. Xu, The Chinese University of Hong Kong
I.H. Wilson, The Chinese University of Hong Kong
Correspondent: Click to Email
The short range order and electronic properties (electronic structure, energy diagram, and charge transport) of bulk amorphous silicon oxynitride (a-SiO@sub x@N@sub y@) were reviewed for the further understand of a-SiO@sub x@N@sub y@ the properties of gate oxynitride of MOS devices on the atomic scale. Amorphous SiO@sub x@N@sub y@ consists of Si-O and Si-N bonds and involves five types of tetrahedra: SiO@sub@nu@@N@sub 4-@nu@@ for @nu@ = 0, 1, 2, 3, 4. The local bonding in SiO@sub x@N@sub y@ is governed by the Mott rule as shown in the equation 4=2x+3y. From x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, x-ray emission spectroscopy and the simulation of the electronic structure, we concluded that Si-O bonds in a-SiO@sub x@N@sub y@ are created by O 2s, 2p and Si 3s, 3p, 3d bonding states, and Si-N bonds are created by N 2s, 2p and Si 3s, 3p, 3d bonding states. Barriers for electron and hole injection at Si-SiO@sub x@N@sub y@ interface also gradually change with composition. The nature of the removal of hole traps from the SiO@sub 2@/Si interface during oxide nitridation was understood from the removing of Si-Si defects. The origin of Si-Si bond creation near the top surface of gate oxynitride after re-oxidation are understood on the basis of the Mott rule through the oxidation of nitride species Si@sub 3@N to form Si-Si bonds.