AVS 45th International Symposium
    Electronic Materials and Processing Division Monday Sessions
       Session EM-MoM

Invited Paper EM-MoM3
Fundamental Issues in Wafer Bonding and SOI

Monday, November 2, 1998, 9:00 am, Room 316

Session: Processing for Advanced Technology
Presenter: U.M. Goesele, Max Planck Institute of Microstructure Physics, Germany
Correspondent: Click to Email
During the last decade, wafer bonding has developed from an approach with a "black magic" image to a versatile technology which is partly already used industrially and which allows to avoid the restrictions usually imposed by epitaxy. The science and technology of wafer bonding has been advanced almost independently in three major areas: i) fabrication of SOI (Silicon-On-Insulator) substrates; ii) silicon based micromechanics (where wafer bonding is known as fusion bonding), and iii) bonding of III-V compounds for light-emitting devices and compliant substrates. Present day research aims at understanding and controlling the processes happening at the bonding interface especially for general material combinations and at developing low temperature bond strenghtening approaches for already processed wafers and/or dissimilar materials with different thermal expansion coefficients. Versatile thinning methods for many different technologically relevant materials such as the smart-cut or related methods are also of special interest. The processes involved in atmospheric, low vacuum, or ultra high vacuum wafer bonding at room temperature will be outlined. Hydrogen implantation-induced delamination and layer transfer (smart-cut and smarter cut procedures) will also be discussed for a number of materials including silicon, germanium, diamond, SiC, GaAs and sapphire.