AVS 45th International Symposium
    Electronic Materials and Processing Division Monday Sessions
       Session EM-MoM

Paper EM-MoM11
Improved Performance in Thin Film Electroluminescent Phosphors by Fluxing

Monday, November 2, 1998, 11:40 am, Room 316

Session: Processing for Advanced Technology
Presenter: J.S. Lewis, University of Florida, Gainesville
Authors: J.S. Lewis, University of Florida, Gainesville
K.E. Waldrip, University of Florida, Gainesville
M.R. Davidson, University of Florida, Gainesville
D. Moorehead, University of Florida, Gainesville
S.S. Sun, Planar Systems, Inc.
P.H. Holloway, University of Florida, Gainesville
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The brightness and efficiency of AC thin film electroluminescent devices (ACTFELD's) which use ZnS:Mn as the thin film phosphor have been improved by the incorporation of various fluxes. The brightness of fluxed, sputter deposited films were doubled and the efficiencies are nearly tripled compared to unfluxed, sputter-deposited films. In addition, the improved brightness and efficiency values surpass those achieved by the standard evaporated or ALE (atomic-layer epitaxy) grown devices. The fluxes have been incorporated both during and after sputter deposition of the phosphor, and a post-deposition anneal is required. Data will be presented which demonstrate improved brightness and efficiency. The flux treatment gave significant improvement in the degradation of luminescence after accelerated device operation. Microstructural changes that result from fluxing as detected by X-ray diffraction, transmission electron microscopy, and scanning electron microscopy will be presented.