AVS 45th International Symposium
    Electronic Materials and Processing Division Friday Sessions
       Session EM-FrM

Paper EM-FrM7
Epitaxial Ferroelectric Ba@sub (1-x)@Sr@sub x@TiO@sub 3@ Thin Films for Tunable Microwave Devices

Friday, November 6, 1998, 10:20 am, Room 316

Session: Fabrication and Characterization of Semiconductor Device Layers
Presenter: C.L. Chen, University of Houston
Authors: C.L. Chen, University of Houston
F.F. Feng, University of Houston
Z.H. Zhang, University of Houston
A. Brazdeikis, University of Houston
F.A. Miranda, Lewis Research Center
Y. Liou, University of Houston
W.K. Chu, University of Houston
C.W. Chu, University of Houston
Correspondent: Click to Email
Perovskite Ba@sub (1-x)@Sr@sub x@TiO@sub 3@ thin films have been synthesized on (001) LaAlO@sub 3@ substrates by pulsed laser ablation. Extensive X-ray diffraction, rocking curve, and pole-figure studies suggest that the films are (001) oriented and exhibit good in-plane relationship of <100>SBTO//<100>LAO. RBS studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield of only 2.6 %. Atomic force microscopy studies indicate that the as-epitaxial films are atomic smooth under the selected growth conditions. The dielectric property measurements by the interdigital technique at frequency up to 1.0 GHz show room temperature values of the relative dielectric constant and loss tangent of 1000 and 0.007 with no bias, and 500 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown BSTO films can be used for development of room temperature high frequency tunable elements and DRAM applications.