AVS 45th International Symposium
    Electronic Materials and Processing Division Friday Sessions
       Session EM-FrM

Paper EM-FrM5
Deposition and Electroluminescent Properties of Sputter Deposited Zn(x)Mg(1-x)S:Mn

Friday, November 6, 1998, 9:40 am, Room 316

Session: Fabrication and Characterization of Semiconductor Device Layers
Presenter: K.E. Waldrip, University of Florida, Gainesville
Authors: M.R. Davidson, University of Florida, Gainesville
K.E. Waldrip, University of Florida, Gainesville
J.S. Lewis, University of Florida, Gainesville
D. Moorehead, University of Florida, Gainesville
B. Speck, University of Florida, Gainesville
P.H. Holloway, University of Florida, Gainesville
S.S. Sun, Planar Systems, Inc.
Correspondent: Click to Email
Alternating current thin film electroluminescent devices (ACTFELD) have been prepared using a ZnxMg(1-x)S:Mn phosphor. The phosphor films were deposited by RF magnetron sputter deposition. The composition of the films was varied by adjusting the substrate temperature causing the relative sticking coefficient of the ZnS and MnS to vary. It was found that the Mg gives a green shift of the peak emission of up to 17 nm. This shift is due to the increased crystal field on the Mn due to the smaller Mg ion substituting on a Zn site. The effects of the Mg on the crystal structure and emission have been characterized using XRD, TEM, and UV-Visible band-edge absorption spectroscopy. The effects of post-deposition anneal and fluxes on the ZnMgS:Mn ACTFELDs will be discussed.