AVS 45th International Symposium
    Electronic Materials and Processing Division Friday Sessions
       Session EM-FrM

Paper EM-FrM2
Investigation of High Temperature Characteristics of Metal-Insulator-Semiconductor Diode Structures Fabricated Using BN Layers Grown on GaN and SiC

Friday, November 6, 1998, 8:40 am, Room 316

Session: Fabrication and Characterization of Semiconductor Device Layers
Presenter: D. Starikov, University of Houston
Authors: D. Starikov, University of Houston
N. Badi, University of Houston
I. Berichev, University of Houston
N. Medelci, University of Houston
A. Tempez, University of Houston
V. Zomorrodian, University of Houston
A. Bensaoula, University of Houston
Correspondent: Click to Email
Dielectric materials commonly used for fabrication of silicon-based semiconductor devices did not prove their viability when applied on wide band gap materials for high temperature applications, such as GaN and SiC. Boron nitride layers grown by physical vapor deposition have several advantages over conventional dielectrics due to their high thermal and chemical stability, mechanical and radiation strength, and excellent surface morphology. In this work we will describe the basic technological processes for fabrication of Metal-Insulator-Semiconductor (MIS) structures on GaN and SiC using insulating BN layers. I-V curves measured in a temperature range up to 700 °C will be presented for MIS-structures based on GaN grown on sapphire, epitaxial 3-C SiC films grown on silicon, and 6H-SiC single crystal wafers. These data will be compared with results obtained from MIS-structures fabricated using similar technology on silicon wafers. The potential barrier height for all structures will be calculated using C-V and I-V measurements at different temperatures. Preliminary results show that GaN-based MIS structures rectify up to 600 °C, while those based on silicon lose their rectification characteristics only at 250 °C. The dependence of the potential barrier height on the thickness of the dielectric (BN) layer and its stability under high temperature vacuum annealing will be discussed and presented. This work was supported by funds from a NASA cooperative agreement #NCC8-127 to SVEC, a Texas Advanced Research Program Grant # 1-1-27764, and a Texas Advanced Technology Program Grant # 1-1-32061