AVS 45th International Symposium
    Applied Surface Science Division Thursday Sessions
       Session AS-ThP

Paper AS-ThP10
Surface X-ray Diffractometer for MOVPE growth at SPring-8

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Aspects of Applied Surface Science Poster Session
Presenter: T. Kawamura, NTT Basic Research Laboratories, Japan
Authors: T. Kawamura, NTT Basic Research Laboratories, Japan
Y. Utsumi, NTT Basic Research Laboratories, Japan
M. Sugiyama, NTT Basic Research Laboratories, Japan
Y. Watanabe, NTT Basic Research Laboratories, Japan
J. Matsui, Himeji Institute of Technology, Japan
Y. Kagoshima, Himeji Institute of Technology, Japan
Y. Tsusaka, Himeji Institute of Technology, Japan
Correspondent: Click to Email
We developed a grazing incidence x-ray diffractometer, installed at the SPring-8 synchrotron facility, to enable the analysis of the initial stage of III-V compound semiconductor homoepitaxial growth in gas-phase. To maintain growth conditions, the z-axis arrangement is used instead of the conventional 4-axes arrangement. The detection range of x-rays is from -5.0 degrees to 135 degrees in 2@theta@, and the incident and the take-off angle ranges from 0 degrees to 15 degrees. To align the goniometer system, additional stages were attached for horizontal and vertical translation, and rotation around the z-axis. The material gases are delivered with a conventional MOVPE gas handling system, consisting of carrier gas supply, material gas handling, and exhaust subsystems. Hydrogen and nitrogen are used for carrier gases, and organometallic vapor sources are selected for material gases. For safety, to avoid the leaks, the whole system, including the goniometer, were installed in an isolated and the cabinet is maintained at lower than atmospheric prresure.