AVS 45th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS-MoM

Invited Paper AS-MoM5
Small Area Analysis: The Synergism of FIB/TEM Instrumentation

Monday, November 2, 1998, 9:40 am, Room 307

Session: Materials Analysis (including Small Dimensions and Synchrotron)
Presenter: L.A. Giannuzzi, University of Central Florida
Authors: L.A. Giannuzzi, University of Central Florida
B.I. Prenitzer, University of Central Florida
J.L. Drown, University of Central Florida
S.R. Brown, Cirent Semiconductor
T.L. Shofner, Bartech Group
R.B. Irwin, Cirent Semiconductor
F.A. Stevie, Cirent Semiconductor
Correspondent: Click to Email
The use of transmission electron microscopy (TEM) as a routine characterization tool has increased over the years, particularly in the microelectronics industry, as a result of the decreasing dimensions of the design rules used in integrated circuits. The need to detect compositional analysis from site specific regions is also a primary concern. TEM is often the only technique that may resolve microstructural and compositional features that are present in complex material components. Until recently, the production of a suitable TEM specimen has often been the limiting factor in TEM analysis. However, the use of focused ion beam (FIB) instrumentation for the production of site-specific TEM specimens has greatly increased the TEM productivity. The versatility of the novel FIB lift-out technique has also allowed for little or no prior sample preparation. In addition, since the bulk sample can be preserved, several TEM specimens may be acquired from the same sample between processing steps. This technique has been expanded to the TEM specimen preparation of microelectronic materials, metals, ceramics, composites, multi-layers, biological materials, fibers, and powders in both cross-section and plan view section.