AVS 45th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS-MoA

Paper AS-MoA8
Ultra Shallow Depth Profiling by ESCA and SIMS

Monday, November 2, 1998, 4:20 pm, Room 307

Session: Oxides and Insulators - Surface Characterization and Applications
Presenter: J.F. Moulder, Physical Electronics, Inc.
Authors: J.F. Moulder, Physical Electronics, Inc.
S.R. Bryan, Physical Electronics, Inc.
Correspondent: Click to Email
The next generation of semiconductor devices will contain shallow implants and other ultra thin structures. SIMS has been the traditional choice for analysis of these ultra thin layers. Because of the nature of these layers, significant challenges are being encountered in the interpretation and quantification of the SIMS data from them. A shallow 250eV boron implant for example, resides completely within the native oxide at the surface of a silicon wafer, complicating quantification by SIMS. ESCA depth profiles obtained with low energy ions (100-500V) and shallow photoelectron take-off angles provide quantitative chemical state information from these ultra thin film structures. ESCA and SIMS data will be presented from shallow boron implants and thin silicon oxy-nitride (ONO) structures. The data suggests that ESCA depth profiles may be very useful for calibrating and interpreting SIMS depth profiles of these ultra thin film structures.