AVS 45th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS-MoA

Paper AS-MoA6
Quantification of Nitrogen in Silicon Oxynitride Thin Films by XPS

Monday, November 2, 1998, 3:40 pm, Room 307

Session: Oxides and Insulators - Surface Characterization and Applications
Presenter: J.R. Shallenberger, Evans East
Authors: J.R. Shallenberger, Evans East
D.A. Cole, Evans East
S.W. Novak, Evans East
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There has been a considerable effort in the past several years to incorporate nitrogen into oxides in order to improve the electrical properties of ultra-thin (2-10 nm) gate oxides. The nitrogen in-depth distribution, concentration and local bonding all affect the electrical properties of the dielectric layer. To date at least five different nitrogen environments have been reported in the XPS literature. All have the general formula: N(Si@sub x@O@sub y@H@sub z@), where x+y+z = 3 and x@<=@3, y@<=@1, z@<=@2. This paper focuses primarily on determining the concentration (to a detection limit of 1x10@super 13@ atoms/cm@super 2@) and local coordination of nitrogen in oxynitrides by XPS. Both Secondary Ion Mass Spectrometry and Nuclear Reaction Analysis are used as complementary tools for quantifying nitrogen; SIMS is also used to determine the in-depth N distribution.