AVS 45th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS-MoA

Paper AS-MoA5
ESCA Depth Profiling of Insulating Thin Film Structures

Monday, November 2, 1998, 3:20 pm, Room 307

Session: Oxides and Insulators - Surface Characterization and Applications
Presenter: J.S. Hammond, Physical Electronics, Inc.
Authors: J.S. Hammond, Physical Electronics, Inc.
J.F. Moulder, Physical Electronics, Inc.
D.J. Hook, Physical Electronics, Inc.
H.M. Dunlop, Pechiney, Centre de Recherches de Voreppe, France
Correspondent: Click to Email
Recent advances in ion gun technology have allowed ESCA to surpass AES as the routine, quantitative depth profiling technique for thin film structures. To effectively utilize the potential of ESCA to provide chemical state information, accurate and reproducible charge neutralization for insulating and mixed insulator/conductor samples is required. Results will be presented comparing traditional, floating, and biased sample mounting techniques, to obtain an optimized process for reproducible, stable charge referencing. Depth profiling data will be presented from doped aluminum oxide thin films, architectural glass coatings, and silicon ONO thin films. Only by using the optimized charge neutralization approach can subtle acid-base chemistry in the aluminum oxide films and chemical states in the oxidized silicon films be elucidated.