| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeM |
| Session: | Plasma-based Film Growth, Etching, & Processing |
| Presenter: | Steven Durrant, UNESP - Sorocaba, Brazil |
| Authors: | D. Rossi, UNESP - Sorocaba, Brazil R. Landers, Ifgw - Unicamp, Brazil J.R. Bortoleto, UNESP - Sorocaba, Brazil F. Durrant, UNESP - Sorocaba, Brazil |
| Correspondent: | Click to Email |
Thin films were produced by plasma enhanced chemical vapor deposition (PECVD) of tetramethylsilane, chloroform, argon mixtures. The partial pressure of chloroform in the chamber feed, CCl. was varied from 0 to 40%. Amorphous hydrogenated carbon films also containing silicon, oxygen and small amounts of chlorine, a-C:H:Si:O:Cl, were produced at deposition rates of up to about 220 nm min-1 (for a CCl of 40%). Transmission infrared- analyses revealed the presence of OH groups in the chlorinated films, along with, amongst others, CH, C=C, Si-CH, Si-CH2 and Si-O-Si groups. As revealed by X-ray photoelectron analysis, the films could be doped with chlorine to a maximum of about 2 at%. Surface morphology and roughness were examined using Scanning electron microscopy (SEM) and Atomic force microscopy (AFM). Tauc band gaps, calculated from transmission ultraviolet-visible near infrared spectra, tend to decrease from ~3.4 eV for the unchlorinated film to around 2.5 eV for those doped with chlorine.