| Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016) | |
| Thin Films | Wednesday Sessions |
| Session TF-WeM |
| Session: | Plasma-based Film Growth, Etching, & Processing |
| Presenter: | Satoshi Hamaguchi, Osaka University, Japan |
| Authors: | S. Hamaguchi, Osaka University, Japan H. Li, Osaka University, Japan T. Ito, Osaka University, Japan M. Isobe, Osaka University, Japan K. Karahashi, Osaka University, Japan |
| Correspondent: | Click to Email |
As the sizes of semiconductor devices continue to diminish and are now approaching atomic scales, the downsizing of transistors following Moore’s law is bound to end in the near future. However, the continuing market demand for higher performance and lower energy consumption of large-scale integrated (LSI) circuits has driven a series of innovations in device technologies, such as three-dimensional (3D) device structures and devices based on non-silicon materials. Manufacturing of these non-conventional devices also poses new challenges for processing technologies. For example, magnetic materials used in magnetoresistive random-access memories (MRAMs) cannot be etched efficiently by the existing reactive ion etching (RIE) technologies, which has so far limited the level of integration of MRAM devices. The modern near-atomic-scale devices also require atomic level precision in their manufacturing processes, which has also driven new technologies such as atomic layer deposition (ALD) and atomic layer etching (ALE). In this work, we have developed analytical techniques to examine plasma-surface interactions at the atomic scale using molecular dynamics (MD) simulation and multi-beam (i.e., ion and radical beam) injection experiments [1], in order to understand atomic layer reaction mechanisms that largely determine efficiencies of such atomic-level processing technologies. Some of our recent analyses include surface chemical reactions for magnetic materials [2,3] metal oxides[4], Si-based materials [5] as well as damage formation mechanisms [6,7] due to ion bombardment during RIE processes.
References
[1] K. Karahashi and S. Hamaguchi, J. Phys. D: Appl. Phys. 47 (2014) 224008.
[2] M. Satake, M. Yamada, H. Li, K. Karahashi, and S. Hamaguchi, J. Vac. Sci. Tech. B 33 (2015) 051810.
[3] H. Li, Y. Muraki, K. Karahashi, and S. Hamaguchi, J. Vac. Sci. Tech. A 33 (2015) 040602.
[4] H. Li, K. Karahashi, M. Fukasawa, K. Nagahata, T. Tatsumi, and S. Hamaguchi, J. Vac. Sci. Tech. A 33 (2015) 060606.
[5] K. Miyake, T. Ito, M. Isobe, K. Karahashi, M. Fukasawa, K. Nagahata, T. Tatsumi, and S. Hamaguchi, Jpn. J. App. Phys. 53 (2014) 03DD02.
[6] K. Mizotani, M. Isobe, and S. Hamaguchi, J. Vac. Sci. Tech. A 33 (2015) 021313.
[7] K. Mizotani, M. Isobe, M. Fukasawa, K. Nagahata, T. Tatsumi and S. Hamaguchi, J. Phys. D: Appl. Phys. 48 (2015) 152002.