Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP32
Influence of Deposition Conditions on the Structural and Optical Properties of nc-Si/SiO2 Films in SiOx Matrix using HW-CVD

Wednesday, December 10, 2014, 4:00 pm, Room Mauka

Session: Thin Films Poster Session
Presenter: Ateet Dutt, Centro de Investigación y de Estudios Avanzados del IPN, Mexico
Authors: A. Dutt, Centro de Investigación y de Estudios Avanzados del IPN, Mexico
Matsumoto, Centro de Investigación y de Estudios Avanzados del IPN, Mexico
Santana-Rodríguez, Universidad Nacional Autónoma de México, Mexico
Santoyo Salazar, Centro de Investigación y de Estudios Avanzados del IPN, Mexico
Godavarthi, Centro de Investigación y de Estudios Avanzados del IPN, Mexico
Correspondent: Click to Email
We have find the influence of deposition time and chamber pressure on the morphology and optical properties of the nanocrystalline silicon (nc-Si) and related composite particles embedded in the amorphous silicon oxide (a-SiOx) matrix using hot wire chemical vapor deposition (HW-CVD). Catalyst material Tungsten (W) was employed for the decomposition of source gases in the reaction chamber. Differences in the crystalline nature of the film deposited on crystalline-Silicon and glass substrates have been explained before also as a function of filament temperature [1]. In this studies using X-Ray diffraction (XRD) and Raman spectroscopy phase differences has been explained with respect to time of deposition and deposition pressure. XRD results demonstrate the presence of crystalline particles related to silicon composites in the amorphous matrix. Fourier transform infrared spectroscopy has been used to study the various surface species present in the film. The as-deposited samples grown at low substrate temperature of about 200°C, has shown photoluminescence spectra in almost all of the visible range (white emission). Photoluminescence has been found to be in correlation with the size of nc-Si particles and/or the defects present in the thin film. This low temperature deposited material could open gateways in future for further device fabrication based on the Si thin film technology.

References:

[1] Y. Matsumoto, S. Godavarthi, M. Ortega, V. Sánchez, S. Velumani, P.S. Mallick Thin Solid Films 519 (2011) 4498