| AVS 64th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS+TF-ThA1 Mechanical, Physical, and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition of Vanadium Nitride using Tetrakis(Dimethylamido)Vanadium and Nitrogen Plasma Mark Sowa, Ultratech, Inc., L. Ju, N.C. Strandwitz, Lehigh University, A.C. Kozen, US Naval Research Laboratory, G. Zeng, B.A. Krick, Lehigh University |
| 2:40pm | PS+TF-ThA2 Optimizing Process Parameters for Plasma Assisted Atomic Layer Deposition David Boris, V.D. Wheeler, Naval Research Laboratory, V.R. Anderson, ASEE (residing at NRL), N. Nepal, Naval Research Laboratory, S.G. Rosenberg, ASEE Postdoctoral Fellow, A.C. Kozen, ASEE (residing at NRL), J.K. Hite, S.G. Walton, Naval Research Laboratory, C.R. Eddy, Jr., U.S. Naval Research Laboratory |
| 3:00pm | PS+TF-ThA3 Tuning of Optical and Structural Properties of ZnO Deposited by Room Temperature-plasma Assisted Atomic Layer deposition Alberto Perrotta, J. Pilz, A.M. Coclite, Graz University of Technology, Austria |
| 3:20pm | PS+TF-ThA4 Influence of Plasma Power on the Si Solar Cell Passivation Properties of Al2O3 Thin Films deposited by Atomic Layer Deposition at 90 °C Z. Zhu, Beneq Oy, Finland, P. Sippola, Aalto University, Finland, Emma Salmi, Beneq Oy, Finland |
| 4:00pm | PS+TF-ThA6 Optimizing MoO3 Plasma-enhanced ALD Thin Films for use in Controllable 2D Material Synthesis Brittney Burant, MIT Lincoln Laboratory |
| 4:20pm | PS+TF-ThA7 Plasma ALD of Fluorides: Process Characterization and In Situ Study of AlF3 ALD Harm Knoops, Oxford Instruments Plasma Technology, UK, M.F.J. Vos, W.M.M. Kessels, A.J.M. Mackus, Eindhoven University of Technology, The Netherlands |
| 4:40pm | PS+TF-ThA8 Ion Energy Control During Remote Plasma ALD for Tuning Material Properties of Transition Metal Nitrides Tahsin Faraz, Eindhoven University of Technology, Netherlands, H.C.M. Knoops, Oxford Instruments Plasma Technology, UK, S. Karwal, M.A. Verheijen, A.A. van Helvoirt, Eindhoven University of Technology, Netherlands, D.M. Hausmann, J. Henri, Lam Research Corporation, M. Creatore, W.M.M. Kessels, Eindhoven University of Technology, Netherlands |
| 5:00pm | PS+TF-ThA9 Understanding the Challenges in Atomic Layer Deposition of SiNx through Identification of the Surface Reaction Mechanisms Rafaiel Ovanesyan, Colorado School of Mines, D.M. Hausmann, Lam Research Corporation, S. Agarwal, Colorado School of Mines |
| 5:20pm | PS+TF-ThA10 First-Principles Understanding and Kinetic Monte Carlo Analysis of Reaction Mechanisms in Plasma Enhanced Atomic Layer Deposition of Silicon Nitride G. Hartmann, University of Texas at Austin, Peter Ventzek, J.P. Zhao, Tokyo Electron America, T. Iwao, K. Ishibashi, Tokyo Electron Tohoku Limited, G. Hwang, University of Texas at Austin |
| 5:40pm | PS+TF-ThA11 High Quality Crystalline AlN Films Produced by PEALD with Microwave ECR Plasma below 200 ºC Jesse Kalliomäki, V. Kilpi, T. Malinen, Picosun Oy, Finland, H. Enami, N. Mise, Hitachi High-Technologies Corp., Japan, H. Hamamura, T. Usui, Hitachi R&D Group, Japan |