AVS 64th International Symposium & Exhibition
    Vacuum Technology Division Monday Sessions
       Session VT-MoA

Paper VT-MoA11
Scaling up an Ion Implant Process Chamber Cryopumping for 450mm Wafer Processing

Monday, October 30, 2017, 5:00 pm, Room 7 & 8

Session: Material Outgassing, Adsorption/Desorption and XHV
Presenter: Steve Borichevsky, Applied Materials, Varian Semiconductor Equipment
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The semiconductor industry recently explored scaling up the wafer diameter from 300mm to 450mm. Ion Implant faced the challenge of providing process vacuum conditions for larger dopant ion beam currents and coping with the outgassing cause by the ion beam striking increased area covered by photoresist. The process chamber, where the ion beam strikes the target wafer, posed the most difficult vacuum challenges. The increased wafer size was predicted to generate 2.25 times the normal gas loads which would require nine 320mm cryopumps. In order to meet the requirements of implant, three prototype 500 mm diameter cryopumps were mounted onto a process chamber and tested. This presentation describes the basic architecture of an ion implanter, the decisions that lead up to the use of 500mm cryopumps, the results of the initial vacuum system testing and the Monte Carlo simulations.