Paper TF-ThP6
Effect of Erbium on the Structural and Morphological Properties of ZnO Films by MW-CBD and its Application in Heterojunction

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

The doped zinc oxide (ZnO) films have attracted much attention because of their great potential for application to transparent conducting electrodes and insulating or ferroelectric layers in optoelectronic devices. Since ZnO has a wide bandgap energy of 3.37 eV at room temperature, its nanocrystals are suitable host materials for doping elements such as rare-earth (RE) and transition metal (TM) ions which are optically and magnetically active. RE doped ZnO nanocrystals are a potential candidate material for flat panel display phosphors due to efficient emission in the visible range, and different activators can be used to modify the color of luminescence. In this study, Erbium (Er) doped ZnO (ZnO:Er) films were deposited by microwave-assisted chemical bath deposition (MW-CBD). The structural and morphological properties of the films were investigated. Zinc nitrate hexahydrate was used as starting materials. The dopant source is Erbium (III) nitrat pentahydrate. The crystal structure and orientation of the films were investigated by X-ray diffraction (XRD) method. The films have the polycrystalline structure. Surface morphology of the films was also investigated by a scanning electron microscope (SEM). The p-Si/n-ZnO:Er heterojunctions were fabricated and their electrical properties were carried out in dark at room temperature. They were exhibited rectifying behavior by using thermionic emission theory. The important junction parameters such as ideality factor, barrier height and series resistance were systematically analyzed by the current-voltage (I-V) curves. Acknowledgements: This work was supported by Anadolu University Commission of Scientific Research Projects under Grant No. 1402F055 and 1705F283.