| AVS 64th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Karim Monfil Leyva, Benemérita Universidad Autónoma de Puebla, Mexico |
| Authors: | K. Monfil Leyva, Benemérita Universidad Autónoma de Puebla, Mexico A.S.L. Salazar Valdez, Benemérita Universidad Autónoma de Puebla, Mexico A. Morales Sánchez, CIMAV-Monterrey, Mexico F. Morales Morales, CIMAV-Monterrey, Mexico J.A. Luna López, Benemérita Universidad Autónoma de Puebla, Mexico A.L. Muñoz Zurita, Universidad Politécnica Metropolitana de Puebla, Mexico |
| Correspondent: | Click to Email |
Silicon rich oxide (SRO) has proved to be a cheap and interesting alternative to develop ultraviolet absorbers or silicon-based light emitters. New electronic and optoelectronic devices based on SRO material may require of single or stacked films with different silicon excess to improve optical and electrical properties. SRO films can be deposited by several deposition techniques but they can be obtained at Room Temperature by RF Sputtering deposition technique and its thickness can be well controlled. Silicon excess can be changed by fixing the RF-Power density on the SiO2 target and changing the RF-Power on the Silicon target (PSi).
In this work, we report a comparative study and analysis of the optical and structural properties of single and stacked SRO thin films obtained by RF Sputtering. Single SRO films were obtained by changing the PSi = 30, 40 and 50 W. Two different stacked SRO films, like a Bilayer (BL) structure, were obtained by changing the PSi = 50/30 W and 30/50 W. All samples were deposited on n-type silicon (Si) substrates with low resistivity (1~5 W•cm). A thermal annealing of 1100°C for 3 hours in N2 ambient was applied to all SRO films. Step measurements were applied to calculate thickness of SRO samples. X-ray photoelectron spectroscopy (XPS) measurements were obtained from all samples to calculate and compare the Silicon excess. XPS results revealed the non-stoichiometric nature of our single SRO films and a change of Silicon excess in the BL structure. SEM images showed clear clusters on surface possible due to Si-nanocrystals (Si-nc) on bulk; also, surface roughness was calculated for all SRO films. Both BL structures showed Photoluminescence emission (PL) at Room Temperature (RT) before and after thermal annealing but the intensity was clearly increased after annealing. BL structures showed higher PL than single SRO films. All SRO samples showed two bands, a low blue band from 400 to 550 nm and a strong red band from 575 nm to 875 nm. Blue and red emission bands were related to Si-nc and defects in the SRO samples.