Paper TF-ThP25
Characteristics of Ge-Sb-Te Film Prepared by Atomic Layer Deposition and Tellurization of Ge-Sb Film

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

The phase change random access memory device is the next generation non-volatile memory device in the spotlight, especially storage class memory applications. Ge-Sb-Te (GST) compounds have been extensively studied due to their fast switching properties among the phase change materials. In particular, the pseudo-binary compositions between GeTe and Sb₂Te₃ attracted much attention. The GST thin films were prepared by physical vapor deposition, chemical vapor deposition and atomic layer deposition (ALD) techniques. Recent studies have focused on ALD of Ge₂Sb₂Te₅ film that combine ALD of GeTe with ALD of Sb₂Te₃, which is relatively complex. In this study, we prepared GST films by ALD and tellurization annealing of Ge-Sb film as an alternative manufacturing method of GST film. This method simplifies the deposition sequence and allows easy control of the film composition. The composition profile, crystal structure and phase transition temperature were investigated by Auger electron spectroscopy, Raman spectroscopy and resistance change before and after tellurium annealing. Changes in resistance were discussed in terms of composition and crystal structure. Gapfilling of the deposited film was also observed before and after tellurization.