| AVS 64th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Seongyoon Kim, Sejong University, Republic of Korea |
| Authors: | S. Kim, Sejong University, Republic of Korea J. Kim, Sejong University, Republic of Korea T.R. Mayangsari, Sejong University, Republic of Korea J.-M. Park, Sejong University, Republic of Korea J.W. Park, Hansol Chemical Co., Ltd., Republic of Korea W.-J. Lee, Sejong University, Republic of Korea |
| Correspondent: | Click to Email |
Titanium-containing thin films are widely used in microelectronic device structures such as high-permittivity capacitors, barrier metals, and metal gate structures. ALD technology has replaced PVD and CVD to provide excellent step coverage, accurate film thickness control, and high film quality. Many organic titanium compounds such as alkylamido titanium compounds and cyclopentadienyl titanium alkoxides have been used as precursors. The preferred properties of such precursors include good thermal stability, high reactivity and sufficient volatility. In the present study, we investigated the ALD of titanium oxide by using cyclopentadienyl titanium alkylamide compound and ozone. Density functional theory calculation was used to predict the properties of precursors, and in-situ QCM and FTIR were used to investigate deposition rates and reaction mechanisms. The physical and electrical properties of the deposited films were also characterized.