Paper TF-ThP16
Materials and Methods for Bottom-Up Semiconductor Device Manufacturing by Selective Surface Modification

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

In order to extend Moore's Law, device makers are looking at bottom-up approaches as an alternative for semiconductor device manufacturing. Recently, the variation in photoresist component distribution that is seen when scaling to sub-20-nm features has highlighted the need for very controlled and uniform distribution of materials. Bottom-up approaches to lithography patterning are able to address these stochastic issues, along with also addressing pattern roughness, excessive lithography steps, and others. We present novel materials and processes that enable selective surface modification with semiconductor device manufacturing as the end application. These materials are able to selectively deposit on various substrates, such as oxide, nitrides, metals, or even organic films. Properties such as selective deposition, catalysis, selective handles for further modification, ALD modifiers, and etch modifiers are reported.