| AVS 64th International Symposium & Exhibition | |
| Thin Films Division | Friday Sessions |
| Session TF-FrM |
| Session: | Self-assembled Monolayers and Organic/Inorganic Interface Engineering |
| Presenter: | Brian Johnson, Brigham Young University |
| Authors: | B.I. Johnson, Brigham Young University A. Diwan, Brigham Young University M.R. Linford, Brigham Young University |
| Correspondent: | Click to Email |
Solution-based silane deposition is well known and has been widely studied. Increasingly, however, people are recognizing the importance of vapor phase deposition of these important reagents. Indeed, these gas phase depositions can be highly reproducible, they involve no solvent, and they can be integrated into production processes. Some of their disadvantages are the cost of the vacuum equipment/ovens needed, and the limitations inherent to the vapor phase, e.g., one cannot allow a polymerization of a silane to take place before the reagent/polymer is deposited on a surface as one can in a solution phase deposition. In this presentation we describe processes for controlling and increasing thicknesses of silane films on silicon surfaces. Variables studied in this work include process temperature, pressure, and reagent concentration. Silane films have been characterized by X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), spectroscopic ellipsometry (SE), and wetting. The depositions described in this work were performed in a commercial chemical vapor deposition (CVD) oven (the 1224P by Yield Engineering Systems). Special emphasis in these studies was placed on minimizing carryover between runs.