AVS 64th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF+MI-ThA

Invited Paper TF+MI-ThA6
Physical Vapor Deposition of Emerging Resistive Memories

Thursday, November 2, 2017, 4:00 pm, Room 20

Session: Control, Characterization, and Modeling of Thin Films II
Presenter: Lin Xue, Applied Materials, Inc.
Authors: M. Pakala, Applied Materials, Inc.
L. Xue, Applied Materials, Inc.
Correspondent: Click to Email
We are getting deeper into the memory centric computing era, with emerging non-volatile memories being rapidly developed to fill gaps in latency, density and functionality. Various types of resistive memories such as STT MRAM, ReRAM and PCRAM are being developed to augment characteristics of available charge based memories. This is driving new deposition process / equipment requirements for these materials, since many of these materials are non-standard materials for an existing semiconductor fab. In my presentation, I will cover the requirements for depositing such materials as well as factors that drive these requirements. Particular focus will be on depositing magnetic tunnel junction stacks for STT MRAM as well as other semiconductor/oxide materials for resistive memories and selectors that can enable high density cross point memory.