| AVS 64th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF+MI-ThA |
| Session: | Control, Characterization, and Modeling of Thin Films II |
| Presenter: | Michal Novotny, Institute of Physics ASCR, Czech Republic |
| Authors: | M. Novotny, Institute of Physics ASCR, Czech Republic J. Bulir, Institute of Physics ASCR, Czech Republic E. Maresova, Institute of Physics ASCR, Czech Republic P. Fitl, University of Chemistry and Technology Prague, Czech Republic J. Vlcek, University of Chemistry and Technology Prague, Czech Republic M. Vondracek, Institute of Physics ASCR, Czech Republic L. Fekete, Institute of Physics ASCR, Czech Republic J. Lancok, Institute of Physics ASCR, Czech Republic N. Abdellaoui, University of Lyon, Université Claude Bernard Lyon, France A. Pereira, University of Lyon, Université Claude Bernard Lyon, France |
| Correspondent: | Click to Email |
Pulsed laser deposition (PLD) is a well-established technique in fabrication of thin films. PLD profits from its simplicity, modesty, versatility and flexibility. Varying deposition conditions, ie. fluence, laser repetition rate, ambient pressure, substrate and its temperature, one can easily influence nucleation and the growth of thin film and consequently its properties. The in-situ monitoring of electrical properties allows sophistically control such processes. We demonstrated the in-situ monitoring possibilities for aluminium and silver as metallic materials examples, titanium nitride and zirconium nitride as nitride materials examples, and zinc oxide and tin oxide as oxide materials examples. The films attract attention in eg. photonics, plasmonics, electronics, sensors and biophysics. Particular application requires the film of special morphology, ie. isolated nanoparticles, arrays, or smooth surface.
The targets of Al, Ag, TiN, ZrN, ZnO and SnO2 were ablated by a Nd:YAG laser operating at wavelength of 266 nm and pulse length of 4 ns. The laser repetition rate was varied from 0.1 Hz to 10 Hz. Electrical conductivity and I-V curve were measured by four-wire technique.
The results of the in-situ monitoring are correlated with the AFM and SEM analyses of the surface morphology, optical properties characterized by spectral ellipsometry and composition studied by XPS. We are able to distinguish the growth mode in the real-time, estimate the point of coalescence as well as the subsequent evolution of the surface roughness and control it. The obtained results provide knowledge toward synthesis of novel functional materials for optoelectronics and sensors.