AVS 64th International Symposium & Exhibition
    Sustainability Focus Topic Wednesday Sessions
       Session SU+AS+EM+MS-WeM

Paper SU+AS+EM+MS-WeM11
Thermal Annealing Effects on the Thermoelectric Properties of Si/Si+Sb Thin Films

Wednesday, November 1, 2017, 11:20 am, Room 5 & 6

Session: Piezoelectrics, Thermoelectrics, and Superconductors
Presenter: Satilmis Budak, Alabama A&M University
Authors: S. Budak, Alabama A&M University
Z. Xiao, Alabama A&M University
M. Curley, Alabama A&M University
M. Howard, Alabama A&M University
B. Rodgers, Alabama A&M University
M. Alim, Alabama A&M University
Correspondent: Click to Email

Thermoelectric devices were prepared from multi-nanolayered Si/Si+Sbthin films using DC/RF magnetron sputtering system. Thermoelectric devices were annealed at different temperatures to form quantum (nano) structures in the multilayer thin films to increase the Seebeck coefficients and electrical conductivity and decrease thermal conductivity. The prepared devices were characterized using Seebeck coefficient measurement; four probe van der Pauw measurement resistivity and the laser thermal conductivity systems. The surface morphology of the fabricated thermoelectric films is characterized using Scanning Electron Microscope (SEM+EDS).

Acknowledgement

Research was sponsored by NSF with grant numbers NSF-HBCU-RISE-1546965, DOD with grant numbers W911 NF-08-1-0425, and W911NF-12-1-0063, U.S. Department of Energy National Nuclear Security Administration (DOE-NNSA) with grant numbers DE-NA0001896 and DE-NA0002687.