AVS 64th International Symposium & Exhibition | |
Surface Science Division | Thursday Sessions |
Session SS+AS+EM-ThA |
Session: | Semiconductor Surfaces |
Presenter: | Qin Pang, Oregon State University |
Authors: | Q. Pang, Oregon State University H. DorMohammadi, Oregon State University O.B. Isgor, Oregon State University L. Árnadóttir, Oregon State University |
Correspondent: | Click to Email |
Fe (III) oxides are the dominant structure of the outer layer of the iron passive film formed in alkaline environment, but chloride ions have been shown to induce depassivation of these passive films under the same conditions. Here we use hematite (α-Fe2O3) to represent the Fe (III) oxides and DFT+U method to investigate the mechanism of the depassivation by studying the interactions of Cl with both pristine α-Fe2O3 (0001) surface and the surface with defects. Total of four surfaces are considered, pristine surface, Fe vacancy surface, O vacancy surface and Fe-O pair vacancy surface. We found that the O vacancies have a positive effect on the adsorption of Cl on the surfaces while the Fe vacancy has a negative effect. The strength of the adsorption on the same site on the four surfaces can be ranked as O vacancy surface, Fe-O pair vacancy surface, pristine surface and Fe vacancy surface. The insertion of the Cl into the sub surface was studied on the four surfaces as well and was found to be endothermic for all four surfaces but surface defects have positive effects on the insertion of Cl by making it less endothermic. The insertion reaction is less endothermic on the O vacancy surface and Fe-O pair vacancy surface. On these two surfaces, the Cl insertion process goes through an O vacancy with reaction energy around 0.5 eV, which is about 1 eV lower than the reaction energy on the pristine surface. The Cl insertion energy is slightly coverage depended, but the insertion remains less favorable than the adsorption of Cl even at higher coverages.