| AVS 64th International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Wednesday Sessions |
| Session SP+SS+TF-WeM |
| Session: | Probing and Manipulating Nanoscale Structure |
| Presenter: | Sampath Gamage, Georgia State University |
| Authors: | S. Gamage, Georgia State University M. Howard, Georgia State University A. Fali, Georgia State University K. Bolotin, Free University of Berlin, Germany Y. Abate, Georgia State University |
| Correspondent: | Click to Email |
Muscovite type mica is an inorganic material most commonly used as in various electronic devices. Mica also satisfies many characteristics such as excellent thermal stability, high dielectric strength, larger dielectric constant, high Q factor, and high electrical resistivity needed for organic field effect transistors (OFETs) 1-2. We use the near-field imaging and nano-FTIR techniques to investigate nanoscale absorption properties of mica exfoliated on SiO2 substrate in the frequency range of 4 – 15 μm.
References
1. Castellanos-Gomez, A.; Poot, M.; Amor-Amorós, A.; Steele, G. A.; van der Zant, H. S. J.; Agraït, N.; Rubio-Bollinger, G., Mechanical properties of freely suspended atomically thin dielectric layers of mica. Nano Research 2012, 5 (8), 550-557.
2. Lu, X. F.; Majewski, L. A.; Song, A. M., Electrical characterization of mica as an insulator for organic field-effect transistors. Organic Electronics 2008, 9 (4), 473-480.