AVS 64th International Symposium & Exhibition
    Scanning Probe Microscopy Focus Topic Monday Sessions
       Session SP+2D+AS+NS+SS-MoA

Paper SP+2D+AS+NS+SS-MoA3
SP-STM Study of Antiferromagnetic CuMnAs Thin Film

Monday, October 30, 2017, 2:20 pm, Room 10

Session: Probing Electronic and Transport Properties
Presenter: Giang Nguyen, Oak Ridge National Laboratory
Authors: G. Nguyen, Oak Ridge National Laboratory
P. Wadley, University of Nottingham, UK
R. Campion, University of Nottingham, UK
K. Edmonds, University of Nottingham, UK
F. Maccherozzi, 3Diamond Light Source, UK
S. Dhesi, 3Diamond Light Source, UK
T. Jungwirth, University of Nottingham, UK
A.-P. Li, Oak Ridge National Laboratory
Correspondent: Click to Email

Antiferromagnetic (AFM) tetragonal CuMnAs thin films have attracted great research interest recently, largely due to the capability of manipulating and detecting of their AFM states with ordinary electric current. Here we report a study on a CuMnAs thin film, grown epitaxially on GaP(001) substrates, using Spin-Polarized Scanning Tunneling Microscopy (SP-STM). An arsenic capping layer is used to protect the sample during transferring through the air which is able to be subsequently removed from the surface by thermal annealing. Atomic resolution STM topographic images of CuMnAs surface are achieved which shows an interesting surface reconstruction. Scanning tunneling spectroscopy (STS) is performed to explore the electronic structure of the thin film as well at the surface step edge. SP-STM study in combination with X-ray magnetic linear dichroism-photoelectron emission microscopic (XMLD-PEEM) measurements provides further understanding of the antiferromagnetic domain structure.

This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.