AVS 64th International Symposium & Exhibition | |
Advanced Surface Engineering Division | Wednesday Sessions |
Session SE+2D+NS+SS+TF-WeA |
Session: | Nanostructured Thin Films and Coatings |
Presenter: | Anil Battu, University of Texas at El Paso |
Authors: | A.K. Battu, University of Texas at El Paso S. Manandhar, University of Texas at El Paso C.V. Ramana, University of Texas at El Paso |
Correspondent: | Click to Email |
Recently, gallium oxide (Ga2O3) has been attracting the attention of researchers as a suitable material for different extreme environment applications, such as high power electronics, optoelectronics, ultraviolet transparent conductive oxides, and gas sensors. β-Ga2O3 exhibits the highest thermal and chemical stability, which makes the material interesting for high-temperature oxygen sensor applications. However, the response time and sensitivity must be improved. In recent years, doping Ga2O3 with the suitable metal ions has been considered to alter the electronic properties and to improve sensor performance. In this context, the present work was performed on using a mechanically resilient metal (Mo) to incorporate into Ga-oxide (GMO) to provide excellent physical and thermo-mechanical characteristics. The GMO nanocomposite films with variable Mo contents (0-11.23 at%) were sputter-deposited onto Si(100) by varying the sputtering power in the range of 0-100 W. The effect of Mo on the crystal structure, mechanical properties and optical properties of GMO nanocomposite films is significant. While Mo content ≤ 4 at% reatins the β-Ga2O3 phase, higher Mo content induces amorphization. Molybdenum incorporation into β-Ga2O3, reduces the grain-size leading to amorphous nature of the entire film as well as surfaces. The nanoindentation studies indicate the remarkable effect of structural evolution and Mo content on the mechanical properties of the deposited GMO thin films. While Mo incorporation increases the hardness from 25 to 36 GPa, elesatic modulus decreases. Mo-induced red-shift in the band gap is significant in GMO films. Based on the results, a structure-property relationship in established in Mo incorporated Ga2O3 films.