AVS 64th International Symposium & Exhibition
    Advanced Surface Engineering Division Wednesday Sessions
       Session SE+2D+NS+SS+TF-WeA

Paper SE+2D+NS+SS+TF-WeA4
Ultra-high Vacuum Magnetron Sputter-deposition of Zr/Al2O3(0001): Effect of Substrate Temperature on Zr Thin Film Microstructure and Thermal Stability of Zr-Al2O3 Interfaces

Wednesday, November 1, 2017, 3:20 pm, Room 11

Session: Nanostructured Thin Films and Coatings
Presenter: Suneel Kodambaka, University of California at Los Angeles
Authors: K. Tanaka, University of California at Los Angeles
J. Fankhauser, University of California at Los Angeles
M. Sato, Nagoya University, Japan
D. Yu, University of California at Los Angeles
A. Aleman, University of California at Los Angeles
A. Ebnonnasir, University of California at Los Angeles
C. Li, University of California at Los Angeles
M. Kobashi, Nagoya University, Japan
M.S. Goorsky, University of California at Los Angeles
S. Kodambaka, University of California at Los Angeles
Correspondent: Click to Email
Zr thin films are grown on Al2O3(0001) substrates in an ultra-high vacuum deposition system via dc magnetron sputtering of Zr target in Ar atmosphere at temperatures Ts between 600 oC and 900 oC. The as-deposited layer surface structure and composition are determined in situ using low-energy electron diffraction and Auger electron spectroscopy, respectively. Bulk crystallinity and microstructures of the samples are determined using x-ray diffraction, cross-sectional transmission electron microscopy along with energy dispersive spectroscopy. At 600 oC ≤ Ts < 750 oC, we obtain fully dense, hexagonal close-packed structured Zr(0001) thin films with smooth surfaces. At Ts ≥ 750 oC, the Zr layers are porous, exhibit {0001} texture, and with rough surfaces. Energy dispersive x-ray spectra obtained from the Zr/Al2O3 interfaces reveal the formation of Zr-Al intermetallic compounds, whose thickness increases exponentially with increasing Ts. We attribute the formation of this interfacial layers to fast diffusion of Zr and reaction with the Al2O3 substrate.}