| AVS 64th International Symposium & Exhibition | |
| MEMS and NEMS Group | Wednesday Sessions |
| Session MN+2D-WeM |
| Session: | 2D NEMS |
| Presenter: | Parmeshwar Prasad, Indian Institute of Science, India |
| Authors: | P. Prasad, Indian Institute of Science, India N. Arora, Indian Institute of Science, India A.K. Naik, Indian Institute of Science, India |
| Correspondent: | Click to Email |
Transition metal dichalcogenide (TMDC) materials offer an alternative to carbon based materials, due to their unique mechanical, electrical and optical properties [1] . Molybdenum disulphide (MoS2 ) is one such material which is being explored for NEMS applications. It has ultra-low mass density of 3.3 fg/μm2 and high Young’s modulus 0.3 TPa . Furthermore, its semi-conducting property allow its mechanical motion to be transduced electrically. NEMS devices based on 2D materials perform exceptionally well in terms of quality factor at low temperatures. Quality factors (Q) as high as 105 have been observed at cryogenic temperatures[2]. However, at room temperatures quality factors are typically pegged at 100. Low quality factor of these resonators make them difficult to transduce the motion of these resonators and thus hinder applications as potential ultra-sensitive detectors. In this paper, we amplify the motion of these resonators by parametric amplification. We report enhancement of mechanical response in MoS2 drum resonator using parametric amplification and achieve ~ 10dB gain. We also show quality factor enhancement in the resonator with parametric amplification at 397 K. The signal enhancement is similar to the recently reported NEMS devices [2], However, the amplification is significantly lower as compared to the reported MEMS devices [3]. We investigate the effect of Duffing (cubic) non-linearity in the current work and show that it plays significant role in the maximum achievable gain from NEMS devices using parametric amplification. The experiments are performed using direct capacitive measurement technique on near insulating ~ 1GΩ device. This shows the ability to perform electrical capacitive actuation and detection technique in very high resistance NEMS devices.
References:
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[1] Morell, N. et al, Nano Lett. 2016, 16 (8), 5102–5108.
[2] Changyao Chen et al, Nat. Nano (2009) 861 - 867
[2] Mathew John P. et al, Nat. Nano.(2016) 747-751
[3] Karabalin R. B. et al, App. Phys. Lett. (2010) 97