AVS 64th International Symposium & Exhibition
    Magnetic Interfaces and Nanostructures Division Wednesday Sessions
       Session MI+SA-WeM

Invited Paper MI+SA-WeM2
Integrated Magnetics and Multiferroics for Compact and Power Efficient Sensing, Power, RF, Microwave and mm-Wave Tunable Electronics

Wednesday, November 1, 2017, 8:20 am, Room 11

Session: Controlling Magnetism in Oxides and Multiferroics and Chirality in Spin Transport and Magnetism (cont.)
Presenter: Nian Sun, Northeastern University
Correspondent: Click to Email

The coexistence of electric polarization and magnetization in multiferroic materials provides great opportunities for realizing magnetoelectric coupling, including electric field control of magnetism, or vice versa, through a strain mediated magnetoelectric coupling in layered magnetic/ferroelectric multiferroic heterostructures [1-9]. Strong magnetoelectric coupling has been the enabling factor for different multiferroic devices, which however has been elusive, particularly at RF/microwave frequencies. In this presentation, I will cover the most recent progress on new integrated multiferroic materials and devices for sensing, and from power to mm-wave electronics. Specifically, we will introduce magnetoelectric multiferroic materials, and their applications in different devices, including: (1) ultra-sensitive magnetometers based on RF NEMS magnetoelectric sensors with picoTesla sensitivity for DC and AC magnetic fields, which are the best room temperature nano-scale magnetometers; (2) novel ultra-compact multiferroic antennas immune from ground plane effect with f200µm × 1µm or l0/600 in size, -18dBi gain, self-biased operation and 1~2% voltage tunable operation frequency; and (3) novel GHz magnetic and multiferroic inductors with a wide operation frequency range of 0.3~3GHz, and a high quality factor of close to 20, and a voltage tunable inductance of 50%~150%. At the same time, I will also demonstrate other voltage tunable multiferroic devices, including tunable isolating bandpass filters, tunable bandstop filters, tunable phase shifters, etc. These novel integrated multiferroic devices show great promise for applications in compact, lightweight and power efficient sensing, power, RF, microwave and mm-wave integrated electronics.

Reference: 1. N.X. Sun and G. Srinivasan, SPIN, 02, 1240004 (2012); 2. J. Lou, et al., Advanced Materials, 21, 4711 (2009); 3. J. Lou, et al. Appl. Phys. Lett. 94, 112508 (2009); 4. M. Liu, et al. Advanced Functional Materials, 21, 2593 (2011); 5. T. Nan, et al. Scientific Reports, 3, 1985 (2013); 6. M. Liu, et al. Advanced Materials, 25, 1435 (2013); 7. M. Liu, et al. Advanced Functional Materials, 19, 1826 (2009); 8. Ziyao Zhou, et al. Nature Communications, 6, 6082 (2015). 9. T. Nan, et al. Nature Comm. under review.