| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | Seth King, University of Wisconsin - La Crosse |
| Authors: | S.T. King, University of Wisconsin - La Crosse K.C. Slezak, University of Wisconsin - La Crosse S.E. Chamberlin, Lawrence University S.M. Lantvit, University of Wisconsin - La Crosse |
| Correspondent: | Click to Email |
Sputter deposited ZnO thin films have been exposed to prolonged high energy gamma radiation in a 400 Ci 137Cs irradiator to examine the impact of such exposure on the optical, structural, and electronic properties of this technologically important wide-bandgap semiconductor . While many studies have shown that ZnO is radiation hard to proton and electron damage [1,2], only one has investigated the effects of exposure to high-energy photons, and not in an iterative manner [3].
UV-Vis spectrometry and spectroscopic ellipsometry show little variation in the over-all transmittance, optical constants, or optical bandgap of the irradiated films. Continued exposure shows a decrease in the films’ resistivity, which, along with supporting x-ray photoelectron spectroscopy data, suggests that induced O-vacancies are acting as donors to dope the irradiated films.
References:
1) S.O. Kucheyev, J.S. Williams, C. Jagadish, J. Zou, C. Evans, A.J. Nelson, and A.V. Hamza, Ion-beam-produced structural defects in ZnO, Phys. Rev. B, 67, 2003, 094115
2) F. Tuomisto, K. Saarinen, D.C. Look, and G.C. Farlow, Introduction and recovery of point defects in electron-irradiated ZnO, Phys. Rev. B, 72, 2005, 085206
3)N. A. Al - Hamdani, R.D. Al – Alawy, and H.J. Hassan, Jrnl. Comp. Eng., 16, 2014, 11-16