| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | Romain Chanson, IMEC, Belgium |
| Authors: | R. Chanson, IMEC, Belgium P.L. Lefaucheux, GREMI, France R. Dussart, GREMI, France T. Tillocher, GREMI, France P. Shen, Air Liquide, Japan K. Urabe, Air Liquide, Japan C. Dussarat, Air Liquide, Japan K. Maekawa, TEL Technology Center, America, LLC K. Yatsuda, Tokyo Electron Limited, Japan S. Tahara, Tokyo Electron Miyagi Limited, Japan J.-F. de Marneffe, IMEC, Belgium |
| Correspondent: | Click to Email |
Low temperature plasma processing is investigated for low damage etching of porous organo-silicate glass ultra-low-k (p-OSG) dielectrics. For additional film protection, in-situ micro capillary condensation is used. This effect allows condensation of a gas precursor into the porous structure. The condensate densifies the porous structure and avoids the plasma by-products to react with the Si-CH3 terminating bonds. In this work, high boiling point organic (HBPO) molecules are studied as reagents for pore filling, enabling for the different gas condensation from -20°C to -50°C. The micro-capillary condensation properties of selected molecules in p-OSG will be compared as well as their desorption kinetic and stability when exposed to a pure SF6 plasma. Using the most promising reagent, patterning tests using a 45nm ½ pitch vehicle and k=2.2 periodic mesoporous oxide low-k dielectric allows to generate vertical trench profiles with good mask selectivity (TiN). A slow kinetic of desorption and a large “Working Window” are critical points for optimal low-k protection.
Acknowledgement: We would like to acknowledge the European commission for its financial support.