AVS 64th International Symposium & Exhibition
    Electronic Materials and Photonics Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP26
The Photoelastic Coefficient P12 of H+ Implanted GaAs as a Function of Defect Density

Thursday, November 2, 2017, 6:30 pm, Room Central Hall

Session: Electronic Materials and Photonics Poster Session
Presenter: Andrey Baydin, Vanderbilt University
Authors: A. Baydin, Vanderbilt University
H.T. Krzyzanowska, Vanderbilt University
R. Gatamov, Vanderbilt University
N.H. Tolk, Vanderbilt University
Correspondent: Click to Email
The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, detectors, and diodes) widely used in space probes are subject to damage arising from energetic proton H+ irradiation. For that reason, the effect of proton irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelectronics. However, there yet remains a lack of systematic studies of energetic proton induced changes in the photoelastic properties of bulk GaAs. In this work, the H+ energy and fluence chosen for GaAs implantation are similar to that of protons originating from the radiation belts and solar flares. We present the depth-dependent photoelastic coefficient P12 profile in non-annealed H+ implanted GaAs obtained from the analysis of the time-domain Brillouin scattering spectra. The depth-dependent profiles are found to be broader than the defect distribution profiles predicted by Monte Carlo simulations. This fact indicates that the changes in photoelastic coefficient P12 depend nonlinearly on the defect concentrations created by the hydrogen implantation. These studies provide insight into the spatial extent to which defects influence photoelastic properties of GaAs.