| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | TienTung Luong, National Chiao Tung University, Taiwan, Taiwan, Republic of China |
| Authors: | T.T. Luong, National Chiao Tung University, Taiwan, Taiwan, Republic of China Y.H. Chen, National Chiao Tung University, Taiwan, Taiwan, Republic of China J.Y. You, National Chiao Tung University, Taiwan, Taiwan, Republic of China S. Chang, National Chiao Tung University, Taiwan, Taiwan, Republic of China Y.T. Ho, National Chiao Tung University, Taiwan, Taiwan, Republic of China Y.C. Lin, National Chiao Tung University, Taiwan, Taiwan, Republic of China J.C.S. Woo, University of California, Los Angeles E.Y. Chang, National Chiao Tung University, Taiwan, Taiwan, Republic of China |
| Correspondent: | Click to Email |
Regarding the unique characteristics (high breakdown field, high power density, high efficiency, and broadband) GaN are now broadly recognized as a key technology for many applications. In particular, GaN-based HEMTs are able to operate at high power, high frequencies, and high temperatures, exhibiting various excellent characteristics superior to those of conventional Si-based semiconductors. GaN-HEMTs on Si technology is expected to drastically reduce the fabrication cost. However, one of the main issues is the parasitic loss that can adversely impact the RF device performances. A free-electron inversion channel, which is caused by the positive piezoelectric charge at the AlN/Si interface induced by the piezoelectric field in the tensile AlN grown on Si, plays a critical role in the RF losses. An adoption of a low-temperature AlN near Si interface induces an unintentionally carbon-doped layer acting as a negatively fixed charge layer that is able to compensate for positive piezoelectric charge resulting in the improvements of both the RF losses and the leakage.