| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | KyuChang Park, Kyung Hee University, Republic of Korea |
| Authors: | K.C. Park, Kyung Hee University, Republic of Korea S.T. Yoo, Kyung Hee University, Republic of Korea |
| Correspondent: | Click to Email |
Deep ultaviolet (UVC) light sources were fabricated with carbon nanotube based electron beam pumping technique. Anode materials for UVC generation made by home-made fabrication process with Zn & Si mixture and irradiated with the carbon nanotube based cold cathode electron beam (C-beam). The C-beam fabricated with triode structure with metal mesh gate electrode and CNT cold cathode. The C-beam shows more than 90% electron transmittance through gate electrode and more than 10 mA anode current in DC operation.
For UVC light generation, anode semiconducting layer formation process is very important and should be optimized with electron beam irradiation current density. The UVC light intensity strongly related on the annealing conditions of anode layer and optimized to 1,000 degree celcius and nitrogen ambient. To reduce the power consumption, C-beam irradiated with DC pulse driving.
UVC light source with novel anode and C-beam irradiation technique shows emission peak at 208 nm, 226 nm, and 245 nm. The emission peak depend on the anode fabrication process and C-beam irradiation coditions. More detail on the UVC light fabrication with C-beam irradiation will be presented