| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | Richard Rosenberg, Argonne National Laboratory |
| Correspondent: | Click to Email |
CdS and CdSe are often used in optoelectronic devices whose effectiveness may be dictated by defects in the near surface region. Luminescence is one of the main tools for studying such defects. The energy dependence of the X-ray excited optical luminescence (XEOL) spectra of these materials enables the extraction of the depth-dependence of the defect distribution.[1] Normal and time-gated XEOL spectra were obtained from these materials in the X-ray energy range 600 to 1500 eV. The individual components of each spectrum were extracted using curve fitting techniques. Each component’s energy-dependent intensity was fit to a “dead layer” model.[2] We find that the results can best be understood in terms of a luminescence dead layer whose width depends on the position of the defect level in the band gap.
[1] R. A. Rosenberg, Y. Choi, K. Vijayalakshmi, M. Kareev, J. Tchakhalian, S. Balaz, and L. J. Brillson, Appl. Phys. Lett. 102, 192910 (2013).
[2] K. Mettler, Appl. Phys. A: Mat. Sci. Proc. 12, 75 (1977).
The work performed at the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.