| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | Weiyi Li, University of Wisconsin - Madison |
| Authors: | W. Li, University of Wisconsin - Madison D.I. Benjamin, University of Wisconsin - Madison J. Chang, University of Wisconsin - Madison Q. Lin, IBM Research Division, T.J. Watson Research Center S.W. King, Intel Corporation J.L. Shohet, University of Wisconsin - Madison |
| Correspondent: | Click to Email |
In this work, we investigate the effects of cesium (Cs) ion implantation on both porogen-embedded and UV-cured (porous) SiCOH films. It has been shown in past work that Cs doping has benefits for either spin-on low-k dielectrics[1] or PECVD deposited non-porous SiCOH low-k dielectrics.[2] For porogen-embedded SiCOH, it was found that Cs ion implantation can greatly improve the elastic modulus up to twice its original value . It can also increase the time-zero dielectric breakdown (TZDB) strength. It also leads to an increase in the k-value for medium and high Cs doses, but for low Cs doses the k-value decreases compared with its pristine counterpart. These effects can be understood by examining the changes in Si-CH3 bonds and Si-O bonds . For UV-cured SiCOH, it was found that Cs ion implantation does not modify the elastic modulus. This also leads to lower TZDB field strength and much higher k-values than its pristine counterpart. This treatment is shown to have a potential to help solve the problem between the demand for lower k-values and the concomitant weak mechanical strength of SiCOH.
This work was supported by the Semiconductor Research Corporation under contract 2012-KJ-2359.
[1] W. Li, D. Pei, X. Guo, M. K. Cheng, S. Lee, Q. Lin, et al., "Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films," Applied Physics Letters, 108, 202901, (2016).
[2] Y. Kayaba, K. Kohmura, H. Tanaka, Y. Seino, T. Odaira, F. Nishiyama, et al., "Electrical reliabilities of highly cross-linked porous silica film with cesium doping," Journal of the Electrochemical Society, 155, G258 (2008).