| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Tuesday Sessions |
| Session EM+SS-TuA |
| Session: | Surface and Interface Challenges in Semiconductor Materials and Devices |
| Presenter: | Samantha Rosenberg, ASEE (residing at NRL) |
| Authors: | S.G. Rosenberg, ASEE (residing at NRL) D.J. Pennachio, University California Santa Barbara V.R. Anderson, ASEE (residing at NRL) N. Nepal, U.S. Naval Research Laboratory C. Wagenbach, Boston University A.C. Kozen, ASEE (residing at NRL) Z.R. Robinson, SUNY Brockport J.A. Logan, University California Santa Barbara S. Choi, University California Santa Barbara J.K. Hite, US Naval Research Laboratory K.F. Ludwig, Boston University C.J. Palmstrøm, University California Santa Barbara C.R. Eddy, Jr., U.S. Naval Research Laboratory |
| Correspondent: | Click to Email |
III-N semiconductors are well suited for applications in several important technological areas, including high current, normally-off power switches.1-3 Such devices require heterostructures not readily achievable by conventional growth methods. While atomic layer deposition (ALD) is a versatile technique and has gained wide use, it does not offer the required level of crystallinity and purity for high-performance III-N semiconductor devices. Therefore, we have developed a technique adapted from ALD, called plasma-assisted atomic layer epitaxy (ALEp).2
Here we employ in-situ and in-vacuo surface studies of GaN substrate preparation and InN ALEp growth to advance fundamental understanding of the ALEp process. We conduct in-situ grazing incidence small angle x-ray scattering (GISAXS) experiments at the Cornell High Energy Synchrotron Source, utilizing morphological evolution monitoring to investigate the growth interface during sample preparation at several different temperatures and film deposition at growth temperature. GISAXS information is complemented with in-vacuo x-ray photoelectron spectroscopy and reflection high-energy electron diffraction studies conducted at the Palmstrøm Lab at UCSB, where we consider traditional molecular beam gallium flash-off and atomic hydrogen etching as ways to produce the most suitable GaN surface for our ALEp-based approach.
1. N. Nepal, et al., Appl. Phys. Lett. 103, 082110 (2013)
2. C. R. Eddy, Jr, et al., J. Vac. Sci. Technol. A 31(5), 058501 (2013).
3. R. S. Pengelly, et al., IEEE Trans. Microwave Theory Tech. 60, 1764 (2012).