| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+2D+MI+MN-WeA |
| Session: | Materials and Devices for Quantum Information Processing |
| Presenter: | David Awschalom, University of Chicago |
| Authors: | B.B. Zhou, University of Chicago D.D. Awschalom, University of Chicago |
| Correspondent: | Click to Email |
There is a growing interest in exploiting the quantum properties of electronic and nuclear spins for the manipulation and storage of information in the solid state. Such schemes offer fundamentally new scientific and technological opportunities by leveraging elements of traditional electronics to precisely control coherent interactions between electrons, nuclei, and electromagnetic fields. Although conventional electronics avoid disorder, recent efforts embrace materials with incorporated defects whose special electronic and nuclear spin states allow the processing of information in a fundamentally different manner because of their explicitly quantum nature [1]. These defects possess desirable qualities – their spin states can be controlled at and above room temperature, they can reside in a material host amenable to microfabrication, and they can have an optical interface near the telecom bands. Here we focus on recent developments that exploit precise quantum control techniques to explore coherent spin dynamics and interactions. In particular, we manipulate a single spin in diamond using all-optical adiabatic passage techniques [2], and investigate the robustness of the acquired geometric (Berry) phase to noise as well as novel strategies to overcome traditional speed limits to quantum gating. Separately, we find that defect-based electronic states in silicon carbide can be isolated at the single spin level [3] with surprisingly long spin coherence times and high fidelity, can achieve near-unity nuclear polarization [4] and be robustly entangled at room temperature [5]. Finally, we identify and characterize a new class of optically controllable defect spin based on chromium impurities in the wide-bandgap semiconductors silicon carbide and gallium nitride [6].
[1] D.D. Awschalom, L.C. Bassett, A.S. Dzurak, E.L. Hu and J.R. Petta, Science 339, 1174 (2013).
[2] C. G. Yale, F. J. Heremans, B. B. Zhou, et al., Nature Photonics 10, 184 (2016); B. B. Zhou et al., Nature Physics 13, 330 (2017).
[3] D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, et al., Nature Materials 14, 160 (2015); D. J. Christle et al., arXiv:1702.07330 (2017).
[4] A. L. Falk, P. V. Klimov, et al., Physical Review Letters 114, 247603 (2015).
[5] P. V. Klimov, A. L. Falk, D. J. Christle, V. V. Dobrovitski, and D. D. Awschalom, Science Advances 1, e1501015 (2015).
[6] W. F. Koehl et al., Editors Suggestion, Phys. Rev. B 95, 035207 (2017).