| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+2D+MI+MN-WeA |
| Session: | Materials and Devices for Quantum Information Processing |
| Presenter: | Yu-Shu Wu, National Tsing-Hua University, Taiwan, Republic of China |
| Correspondent: | Click to Email |
Electrons in gapped graphene carry a unique binary degree of freedom called valley pseudospin, in association with the two-fold valley degeneracy at the Dirac points (K and K’) of Brillouin zone. Such pseudospin carries an intrinsic angular momentum and responds to external electromagnetic fields in ways similar to those of an ordinary electron spin [1,2]. We examine the response and address the important issue of valleytronics - the electrical manipulation of valley pseudospin. A unified methodology called VOI based valleytronics will be presented, which exploits the valley-orbit interaction (VOI) between an in-plane electric field and a valley pseudospin for the implementation of valleytronics. Based on the VOI mechanism, a family of fundamental structures have been proposed with important device functions, such as valley qubits, valley filters, and valley FETs [3]. We will report recent theoretical developments in these structures.
[1] Rycerz et al., Nat. Phys. 3 (2007),172.
[2] Xiao et al., Phys. Rev. Lett. 99, (2007), 236809.
[3] Wu et al., Phys. Rev. B 84, (2011), 195463; ibid B 86 (2012), 165411; ibid B 88 (2013), 125422; ibid B 94 (2016), 075407.