| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Wednesday Sessions |
| Session EM+2D+MI+MN-WeA |
| Session: | Materials and Devices for Quantum Information Processing |
| Presenter: | Adam Gali, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Hungary |
| Correspondent: | Click to Email |
Luminescent and paramagnetic point defects in insulators and semiconductors may realize quantum bits that could be the source of next generation computers and nanoscale sensors. Detailed understanding of the optical and magnetic properties of these defects is needed in order to optimize them for these purposes.
In this talk I show our recent methodology developments in the field to calculate the ground and excited state of point defects and to determine their Auger-rates, hyperfine tensors and electron spin – electron spin couplings, and intersystem crossing rates. We show recent results on the nitrogen-vacancy center in diamond as well as divacancy and other defects in silicon carbide that we have found a very promising alternative to the well-established nitrogen-vacancy center for integration of traditional semiconductor and quantum technologies into a single platform.