AVS 64th International Symposium & Exhibition
    Electronic Materials and Photonics Division Wednesday Sessions
       Session EM+2D+MI+MN-WeA

Paper EM+2D+MI+MN-WeA10
Studies on Influence of Processing on Optical Characteristics of Electron Irradiated 4H-SiC Nanostructures

Wednesday, November 1, 2017, 5:20 pm, Room 14

Session: Materials and Devices for Quantum Information Processing
Presenter: Shojan Pavunny, ASEE Research Fellow at U.S. Naval Research Laboratory
Authors: S.P. Pavunny, ASEE Research Fellow at U.S. Naval Research Laboratory
H. Banks, NRC Research Fellow at U.S. Naval Research Laboratory
P.B. Klein, U.S. Naval Research Laboratory
K.M. Daniels, NRC Research Fellow at U.S. Naval Research Laboratory
M.T. DeJarld, ASEE Research Fellow at U.S. Naval Research Laboratory
E.R. Glaser, U.S. Naval Research Laboratory
S.G. Carter, U.S. Naval Research Laboratory
R.L. Myers-Ward, U.S. Naval Research Laboratory
D.K. Gaskill, U.S. Naval Research Laboratory
Correspondent: Click to Email
Spin-coherent single silicon defect centers (VSi) in wide bandgap silicon carbide polytypes have recently drawn great research interest for future applications in information technologies such as scalable quantum computing, sensing and metrology. Identification of these deep defects, gaining a thorough knowledge of their characteristics, active control of their concentrations, isolation of single spin defects and understanding the effects of semiconductor processing on their properties are crucial challenges for the realization of SiC based quantum electronic and integrated photonic devices. These color centers coupled to photonic crystal cavities (PCC) have the capability of high efficiency emission of zero phonon lines which can significantly improve the performance of on-chip photonic networks and long-distance quantum communication systems, as compared to conventional solid-state emitters. Here we investigate the impact of fabrication process on the photoluminescence properties of PCCs realized using three techniques: hydrogen implantation to form thin SiC layers on an oxide layer that can be easily etched away to form an air gap under the PCC, wafer bonding and mechanical thinning of the SiC, also on an oxide layer, and selective electrochemical anodization of an n-p epitaxial SiC structure to form an air gap. We also comment upon the impact of electron irradiation for these three fabrication techniques.