AVS 64th International Symposium & Exhibition
    Electronic Materials and Photonics Division Wednesday Sessions
       Session EM+2D+MI+MN-WeA

Invited Paper EM+2D+MI+MN-WeA1
Controlling the Valley Degree of Freedom in 2D Transition Metal Dichalcogenides

Wednesday, November 1, 2017, 2:20 pm, Room 14

Session: Materials and Devices for Quantum Information Processing
Presenter: Tony Heinz, Stanford University / SLAC National Accelerator Laboratory
Correspondent: Click to Email

Monolayer transition metal dichalcogenide crystals in the MX2 family with M = Mo, W and X = S, Se have been shown to provide attractive possibilities for access to the valley degree of freedom both optically and through the valley Hall effect. In this paper we will summarize recent advances in the electrical and optical control of the valley degree of freedom in this class of materials.

The optical selection rules in the transition metal dichalocogenide monolayers permit selective creation of excitons in either the K or K' valley through the use of circularly polarized light. Excitons consisting of coherent superpositions of both valleys can also be produced through excitation with linearly polarized light. While these results have already been demonstrated experimentally, to date there has been no report of an approach to manipulate the valley exciton pseudospin after its creation. In this paper we present our recent use of the optical Stark effect to dynamically modify the valley pseudospin. The approach is based on selectively altering the energy of one valley vis-a-vis the other through application of a sub-gap optical pulse with circular polarization. This perturbation leads to a rapid rotation of the exciton valley pseudospin, as revealed by a change in the polarization state of the exciton emission.

In a second line of investigation, we have applied to spin-valley Hall effect in transition metal dichalocogenide monolayers to produce spatially separated regions with enhanced valley (and spin) populations. This is achieved by running a current through a hole-doped monolayer and relying on the anomalous velocity terms to separate the holes spatially. The resulting spin-valley spatial profile has been directly imaged on the micron scale and characterized using measurements based on the optical Kerr effect. The magnitude of this spin-valley imbalance and its dependence on doping and bias fields have been investigated and compared with theoretical predictions.