AVS 64th International Symposium & Exhibition
    Applied Surface Science Division Tuesday Sessions
       Session AS+MI+SS-TuM

Paper AS+MI+SS-TuM12
Quantifying Valence Band Offsets at Metal\(Hf,Zr)O2 Interfaces for Ferroelectric Devices

Tuesday, October 31, 2017, 11:40 am, Room 13

Session: Quantitative Surface Analysis: Effective Quantitation Strategies
Presenter: Michael Brumbach, Sandia National Laboratories
Authors: M.T. Brumbach, Sandia National Laboratories
S. Smith, Sandia National Laboratories
M.D. Henry, Sandia National Laboratories
J. Dickerson, Sandia National Laboratories
D. Robinson Brown, Sandia National Laboratories
J. Ihlefeld, Sandia National Laboratories
Correspondent: Click to Email

The compatibility of HfO2 deposition with current silicon microelectronic processing make it an appealing alternative to traditional ferroelectrics. A variety of applications, including Tunneling Electroresistance devices, can benefit from the switchable polarization of HfO2-based thin films, first reported in 2011. In these devices the optimal band-alignment for electron transport is dependent on selection of top and bottom contact materials. In this work, the valence band offset of (Hf,Zr)O2 with a number of metal contacts has been quantified by X-ray photoemission measurements. Coupled with experiment, simulations have been performed to identify the band offsets for successful device operation. Metal contacts investigated include Pt, Ni, Au, Al, Ta, and TaN. For some metal films there is the experimental consideration for the impact of air oxidation on the measured valence band offsets. In addition to characterizing films in a bottom-up approach, the metal layers were ion milled to thin the overlying metal and reveal the interfacial boundary. In such cases, the oxide was removed and valence band offset values were measured. The role of differential sputtering in mono-atomic and the application of gas cluster ion sputtering to alleviate differential sputtering will be discussed. Additional techniques including inverse photoemission, UV-photoemission, and Kelvin probe will be presented for further quantification of the valence band offsets.

Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.