Paper 2D-WeA11
Direct Write Mask Free Fabrication of Semiconductor 2D Architectures on Different Substrates using Aqueous Inks

Wednesday, November 1, 2017, 5:40 pm, Room 15

Low dimensional semiconductor materials with different sized band-gaps such as 2D atomic crystals, for example WS2 or MoS2 layered van der Waals materials, or 1D nanowires (NWs) and nanoribbons such as ZnO, or semiconducting carbon nanotubes (CNTs), have drawn significant attention due to their unique physical, chemical, mechanical properties, and other just to name a few. Low dimensional materials when assembled in vertical or lateral arrangements often lead to the largely enhanced properties, and new functionalities. While the preparation of layered architectures usually involves multi-step fabrication processes it also relies on mask assisted lithographic processes.

Here we present controlled selective preparation of 1D and 2D nanostructures of MoS2, WS2 and ZnO in the variety of geometric assemblies by employing parallel direct write patterning (DWP) of aqueous ink precursors on substrates at predefined locations. In a two-step process (1^st patterning and 2^nd growth) our unconventional fabrication approach enables simple and flexible production of hetero-structures and other architectures based on “mix and match” principle in precisely controlled fashion. Location specific synthesis of materials also provides access to as-grown interfaces and rapid testing of materials quality, crystallinity and chemical composition which was confirmed by various characterization methods (Raman Spectroscopy, PL, AFM, XRD etc)

Acknowledgement

Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02 06CH11357