AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Wednesday Sessions
       Session 2D+EM+SS+TF-WeM

Invited Paper 2D+EM+SS+TF-WeM3
Epitaxial Growth of Atomically Thin Transition Metal Dichalcogenides and their Electronic Structures

Wednesday, November 1, 2017, 8:40 am, Room 15

Session: 2D Materials Growth and Fabrication
Presenter: Sung-Kwan Mo, Lawrence Berkeley National Laboratory
Correspondent: Click to Email

Transition metal dichalcogenides (TMDCs) is a versatile material platform with a variety of electrical, optical, and topological properties that can be controlled through thickness, strain, field, and other perturbations. In this talk, I will first discuss the growth of atomically-thin TMDC films, such as MoSe2, WSe2, WTe2, NbSe2, and TaSe2, with a layer-by-layer thickness control, using molecular beam epitaxy. Then, I will present how we investigate the electronic structures of these films using angle-resolved photoemission spectroscopy and scanning tunneling microscopy.