| AVS 62nd International Symposium & Exhibition | |
| Surface Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | SS+AS+EM+EN-ThM1 Reaction of 1,2,3-Benzenetriol with the Ge(100)-2x1 Surface Tania Sandoval, S.F. Bent, Stanford University |
| 8:20am | SS+AS+EM+EN-ThM2 Ethylenediamine Grafting on Oxide-free H-, F-, and Cl- terminated Si(111) Surfaces Tatiana P. Chopra, R.C. Longo, K.J. Cho, University of Texas at Dallas, M.D. Halls, Schrodinger, Inc., P. Thissen, Karlsruhe Institute of Technology, Germany, Y.J. Chabal, University of Texas at Dallas |
| 8:40am | SS+AS+EM+EN-ThM3 Reaction of Phenylhydrazine with Cl-Si(111) Surface by Wet Chemistry and with Clean Silicon Surface in UHV A.V. Teplyakov, Fei Gao, University of Delaware |
| 9:00am | SS+AS+EM+EN-ThM4 Anomalously Low Surface Recombination Velocity for Fluorine Terminated Nanopatterned Si Surfaces W.N. Peng, Jonghan Park, L.-H. Liu, R.C. Longo, University of Texas at Dallas, D.J. Michalak, Intel Corporation, D.M. Pak, Y.J. Lee, J.X. Hsu, K.J. Cho, Y.J. Chabal, University of Texas at Dallas |
| 9:20am | SS+AS+EM+EN-ThM5 Invited Paper Molecular Functionalization of Semiconductor Surfaces: From Single Crystals to Quantum Dots Stacey Bent, Stanford University |
| 11:00am | SS+AS+EM+EN-ThM10 Periodic Trends in the Hydrogen Elimination Thermal Decomposition Reaction on Si(100)-2×1: Linear and Branched Alkyl Halides, Alcohols, and Amines Andrew Pohlman, K.L. Romolino, N.J. Burgener, S.M. Casey, University of Nevada |
| 11:20am | SS+AS+EM+EN-ThM11 Diffusion of Arsenic Oxides During the Atomic Layer Deposition of Metal Oxide Films on GaAs(100) Surfaces Alex Henegar, T. Gougousi, University of Maryland, Baltimore County |
| 11:40am | SS+AS+EM+EN-ThM12 Ultrafast Non-Equilibrium Effects in Ti Overlayers on P-Type GaAs(100) Investigated by Femtosecond XUV Photoemission Spectroscopy Mihai E. Vaida, University of California, Berkeley, S.R. Leone, University of California, Berkeley and Lawrence Berkeley National Laboratory |
| 12:00pm | SS+AS+EM+EN-ThM13 Improving the Quality of p-type AlGaN Layers by Reactive-ion Etching Joy McNamara, K.L. Phumisithikul, A.A. Baski, M.A. Reshchikov, Virginia Commonwealth University, J. Marini, F. Shahedipour-Sandvik, SUNY Polytechnic Institute |