Invited Paper TF+EM+MI+MS-TuM10
ALD for Capacitor Technologies

Tuesday, October 20, 2015, 11:00 am, Room 111

Atomic layer deposition (ALD) is a powerful processing technique that can be used to modify interfacial processes occuring in electrochemical capacitors. Charge storage mechanism in electrochemical capacitors is either due to electrostatic double layer formation or pseudocapacitive faradaic interactions at electrode/electrolyte interfaces. The talk will present an overview of our efforts in developing pseudocapacitive vanadium oxide thin films using ALD approach on high surface area carbon electrodes. The deposition process is dependent upon the carbon properties such as surface functionalization and porosity. We will report our investigation of deposition of ALD films on nanostructured carbon electrodes with controlled porosity in mesopores (<20 nm) to ultramicropore (0.8 nm to 2 nm) ranges. ALD also facilitates the possibility of combining electrochemical effects with dielectric effects. ALD of dielectrics such as Al₂O₃ on electrodes used in aqueous, organic and lithium based electrolytes can mitigate the issues relating to electrochemical stability due to solvent decomposition reactions and leakage performance with limited effect on the ESR performance of the capacitor. There is also possibility of designing novel solid state capacitor structures that synergistically integrates the electrical double layer interactions due to ions with dielectric energy storage.